Longtime Slashdot reader DrunkenTerror shares a report from AnandTech. SK Hynix this week announced plans to build an advanced memory packaging facility in West Lafayette, Indiana. The move is considered a milestone for both the memory manufacturer and the United States, as it is the first advanced memory packaging facility in the United States and the company's first large-scale manufacturing operation in the United States. The facility will be commissioned in 2028 and will be used to build next-generation types of high-bandwidth memory (HBM) stacks. SK Hynix also agreed to work on a research and development project with Purdue University.
This facility handles the assembly of HBM Known Good Stacked Dies (KGSDs), which consist of multiple memory devices stacked on top of a base die. Additionally, it will be used to develop the next generation of his HBM, so a packaging research and development line will be set up. However, the factory will not manufacture its own DRAM dies, and will likely source them from SK Hynix's factory in South Korea. The factory will require a $3.87 billion investment by SK Hynix, making it one of the most advanced semiconductor packaging facilities in the world. Meanwhile, SK Hynix held an investment agreement ceremony with representatives from Indiana State University, Purdue University and the U.S. government to highlight the parties financially involved in the project, but at this week's event, SK Hynix It was not disclosed whether it would receive funding from the U.S. government. Under the CHIPS Act or other funding initiatives.
